GCMX010A120B3H1P

SemiQ
148-GCMX010A120B3H1P
GCMX010A120B3H1P

Mfr.:

Description:
MOSFET Modules 1200V, 10mohm SiC MOSFET Full Bridge Module

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about SemiQ GCMX010A120B3H1P

Availability

Stock:
Non-Stocked
Factory Lead Time:
20 Weeks Estimated factory production time.
Minimum: 20   Multiples: 20
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (USD)

Qty. Unit Price
Ext. Price
$117.65 $2,353.00
$106.55 $10,655.00
500 Quote

Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: MOSFET Modules
RoHS:  
SiC
Press Fit
B3
N-Channel
4 Channel
1.2 kV
201 A
8.9 mOhms
- 5 V, + 20 V
4 V
- 40 C
+ 150 C
600 W
GCMX
Bulk
Brand: SemiQ
Fall Time: 15 ns
Height: 15.2 mm
Length: 62.8 mm
Product: Modules
Product Type: MOSFET Modules
Rise Time: 9 ns
Factory Pack Quantity: 20
Subcategory: Discrete and Power Modules
Type: Full Bridge Module
Typical Turn-Off Delay Time: 50 ns
Typical Turn-On Delay Time: 32 ns
Vf - Forward Voltage: 3.9 V
Width: 56.7 mm
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Attributes selected: 0

Datasheet

USHTS:
8541100080
ECCN:
EAR99

GCMX 1200V SiC MOSFET Full-Bridge Modules

SemiQ GCMX 1200V SiC MOSFET Full-Bridge Modules offer low switching losses, low junction-to-case thermal resistance and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The hallmark characteristic of these modules is the robust 1200V drain-source voltage. The GCMX full-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems and high-voltage DC-to-DC converters.

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