IS66WV51216EBLL-55TLI

ISSI
870-66WV512EBLL55TLI
IS66WV51216EBLL-55TLI

Mfr.:

Description:
SRAM 8Mb Pseudo SRAM Async 512Kx16 55ns

Datasheet:
ECAD Model:
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Learn more about ISSI IS66WV51216EBLL-55TLI

In Stock: 1,733

Stock:
1,733 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 28
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$3.74 $3.74
$3.49 $34.90
$3.38 $84.50

Product Attribute Attribute Value Select Attribute
ISSI
Product Category: SRAM
RoHS:  
8 Mbit
512 k x 16
55 ns
Parallel
3.6 V
2.5 V
28 mA
- 40 C
+ 85 C
SMD/SMT
Brand: ISSI
Moisture Sensitive: Yes
Product Type: SRAM
Series: IS66WV51216EBLL
Factory Pack Quantity: 135
Subcategory: Memory & Data Storage
Unit Weight: 2.870 g
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Attributes selected: 0

Datasheet

Models

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CNHTS:
8542329010
CAHTS:
8542320030
USHTS:
8542320041
JPHTS:
854232019
TARIC:
8542324500
MXHTS:
8542320299
ECCN:
3A991.b.2.a

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

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