IS66WVE2M16EBLL-70BLI

ISSI
870-66E2M16EBLL70BLI
IS66WVE2M16EBLL-70BLI

Mfr.:

Description:
SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS

ECAD Model:
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In Stock: 960

Stock:
960 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$4.76 $4.76

Alternative Packaging

Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
$4.61
Min:
1

Product Attribute Attribute Value Select Attribute
ISSI
Product Category: SRAM
RoHS:  
32 Mbit
2 M x 16
70 ns
Parallel
3.6 V
2.7 V
30 mA
- 40 C
+ 85 C
SMD/SMT
TFBGA-48
Brand: ISSI
Memory Type: SDR
Moisture Sensitive: Yes
Product Type: SRAM
Series: IS66WVE2M16EBLL
Factory Pack Quantity: 480
Subcategory: Memory & Data Storage
Type: Asynchronous
Unit Weight: 86 mg
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CNHTS:
8542329000
USHTS:
8542320002
JPHTS:
854232021
KRHTS:
8542321010
TARIC:
8542324500
MXHTS:
8542320201
ECCN:
EAR99

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.