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IXYK140N120A4

Name: IXYS IXYK140N120A4
Brand: IXYS
SKU: 747-IXYK140N120A4
Price: 43.97 USD
Availability: InStock

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Mouser No:

747-IXYK140N120A4

Mfr. No:

IXYK140N120A4

Mfr.:

IXYS

Description:

IGBTs TO264 1200V 140A GENX4

Datasheet:

IXYK140N120A4 Datasheet (PDF)

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In Stock: 2,921

Stock:: 2,921 Can Dispatch Immediately

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Factory Lead Time:: 32 Weeks Estimated factory production time for quantities greater than shown.

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Qty.	Unit Price	Ext. Price
	$43.97	$43.97
	$31.66	$316.60

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-264-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.7 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	480 A
Pd - Power Dissipation:	1.5 kW
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	Trench
Packaging:	Tube
Brand:	IXYS
Continuous Collector Current Ic Max:	480 A
Gate-Emitter Leakage Current:	200 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	25
Subcategory:	IGBTs

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Datasheet

IXYK140N120A4 Datasheet (PDF)

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

650V XPT™ High Speed Trench IGBTs

IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of +110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions - a 10μs Short Circuit Safe Operating Area (SCSOA).

Trench 650V to 1200V XPT™ GenX4™ IGBTs

IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The devices exhibit exceptional ruggedness during switching and under short-circuit conditions.

IXYxN120A4 XPT™ GenX4™ IGBTs

IXYS IXYxN120A4 XPT™ GenX4™ IGBTs are the 4th generation Trench IGBTs that feature XPT thin-wafer technology. These ultra-low V_SAT IGBT transistors support switching frequencies up to 5kHz and are optimized for low conduction losses. The IXYxN120A IGBTs offer advantages such as high power density, a low gate drive requirement, and an operating temperature from -55°C to +175°C. These transistors come in TO-247 and TO-269HV packages, each featuring a voltage of 1200V and a current of 55A or 85A. The IXYxN120A IGBTs are used in applications such as power inverters, motor drives, PFC circuits, battery chargers, welding machines, lamp ballasts, and inrush current protector circuits.