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RoHS

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MASTERGAN1L

Name: STMicroelectronics MASTERGAN1L
Brand: STMicroelectronics
SKU: 511-MASTERGAN1L
Price: 8.82 USD
Availability: OutOfStock

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Mouser No:

511-MASTERGAN1L

Mfr. No:

MASTERGAN1L

Mfr.:

STMicroelectronics

Description:

Gate Drivers 600 V half-bridge enhancement mode GaN HEMT with high voltage driver

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Datasheet:

MASTERGAN1L Datasheet (PDF)

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Factory Lead Time:: 26 Weeks Estimated factory production time.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$8.82	$8.82
	$6.61	$66.10
	$6.30	$157.50
	$5.47	$547.00
	$5.22	$1,305.00
	$4.76	$2,380.00
	$4.26	$4,260.00

Alternative Packaging

Mfr. Part No.:

MASTERGAN1LTR

Packaging:

Reel, Cut Tape

Availability:

In Stock

Price:

$7.14

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Gate Drivers
RoHS:
Product:	Half-Bridge Drivers
Type:	Half-Bridge
Mounting Style:	SMD/SMT
Package/Case:	QFN-31
Number of Outputs:	4 Output
Output Current:	12 A
Supply Voltage - Min:	4.75 V
Supply Voltage - Max:	9.5 V
Configuration:	Non-Inverting
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	MASTERGAN
Packaging:	Tray
Brand:	STMicroelectronics
Moisture Sensitive:	Yes
Pd - Power Dissipation:	40 mW
Product Type:	Gate Drivers
Propagation Delay - Max:	70 ns
Factory Pack Quantity:	1560
Subcategory:	PMIC - Power Management ICs
Technology:	GaN

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Datasheet

MASTERGAN1L Datasheet (PDF)

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CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an R_DS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.