MR4A16BCYS35

Everspin Technologies
936-MR4A16BCYS35
MR4A16BCYS35

Mfr.:

Description:
MRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about Everspin Technologies MR4A16BCYS35

In Stock: 5

Stock:
5 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$56.35 $56.35
$52.07 $520.70
$50.39 $1,259.75
$49.13 $2,456.50
$47.75 $5,157.00

Product Attribute Attribute Value Select Attribute
Everspin Technologies
Product Category: MRAM
RoHS:  
TSOP-II-54
Parallel
16 Mbit
1 M x 16
16 bit
35 ns
3 V
3.6 V
60 mA, 152 mA
- 40 C
+ 85 C
MR4A16B
Tray
Brand: Everspin Technologies
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Pd - Power Dissipation: 600 mW
Product Type: MRAM
Factory Pack Quantity: 108
Subcategory: Memory & Data Storage
Tradename: Parallel I/O (x16)
Unit Weight: 4.193 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

PCN

This functionality requires JavaScript to be enabled.

CNHTS:
8542329010
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320312
KRHTS:
8542321040
TARIC:
8542329000
MXHTS:
8542320299
ECCN:
EAR99

MR4A08B & MR4A16B 16Mb Parallel MRAMs

Everspin Technologies MR4A08B and MR4A16B 16Mb Parallel MRAM devices provide SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR4A08B is a 16,777,216-bit Magnetoresistive Random Access Memory (MRAM) device organized as 2,097,152 words of 8 bits. 

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.