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In Stock

RoHS

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MSC080SMB120B4N

Name: Microchip MSC080SMB120B4N
Brand: Microchip Technology
SKU: 579-MSC080SMB120B4N
Price: 6.28 USD
Availability: InStock

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Mouser No:

579-MSC080SMB120B4N

Mfr. No:

MSC080SMB120B4N

Mfr.:

Microchip Technology

Description:

SiC MOSFETs MOSFET SIC 1200 V 80 mOhm TO-247-4 Notch

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

MSC080SMB120B4N Datasheet (PDF)

ECAD Model:

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Learn more about Microchip Technology MSC080SMB120B4N

In Stock: 81

Stock:: 81 Can Dispatch Immediately

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Factory Lead Time:: 3 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$6.28	$6.28
	$5.79	$173.70
	$5.04	$604.80

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	107 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	34 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	161 W
Channel Mode:	Enhancement
Brand:	Microchip Technology
Configuration:	Single
Fall Time:	8 ns
Packaging:	Tube
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	8 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	17 ns
Typical Turn-On Delay Time:	11 ns

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Datasheet

MSC080SMB120B4N Datasheet (PDF)

PCN

Product Change Notification 2026-1-9 (PDF)

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ECCN:: EAR99

1200V SIC MOSFETs

Microchip Technology 1200V SIC MOSFETs offer high efficiency in a lighter, more compact solution. The devices supply low internal gate resistance (ESR), resulting in a fast switching speed. The MOSFETs are simple to drive and easy to parallel, with improved thermal capabilities and lower switching losses.