RGS50TSX2DGC11

ROHM Semiconductor
755-RGS50TSX2DGC11
RGS50TSX2DGC11

Mfr.:

Description:
IGBTs 10 s Short-Circuit Tolerance, 1200V 25A, FRD Built-in, Field Stop Trench IGBT

Datasheet:
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Learn more about ROHM Semiconductor RGS50TSX2DGC11

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: IGBTs
RoHS:  
REACH - SVHC:
Si
TO-247N-3
Through Hole
Single
1.2 kV
2.1 V
30 V
50 A
395 W
- 40 C
+ 175 C
Tube
Brand: ROHM Semiconductor
Gate-Emitter Leakage Current: 500 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 450
Subcategory: IGBTs
Part # Aliases: RGS50TSX2D
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Attributes selected: 0

Datasheet

PCN

Specification Sheets

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Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99
Origin Classifications
Country of Origin:
Thailand
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

RGSx0TSX2x Field Stop Trench IGBTs

ROHM Semiconductor RGSx0TSX2x Field Stop Trench IGBTs are 10µs SCSOA (Short Circuit Safety Operating Area) guaranteed Insulated Gate Bipolar Transistors, suitable for general inverter, UPS, PV inverters, and power conditioner applications. The RGSx0TSX2x IGBTs offer low conduction loss that contributes to reduced size and improved efficiency. These devices utilize original trench-gate and thin-wafer technologies. These technologies help achieve low collector-emitter saturation voltage (VCE(sat)) with reduced switching losses. These IGBTs provide increased energy savings in a variety of high voltage and high current applications.

In Stock: 218

Stock:
218 Can Dispatch Immediately
Factory Lead Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$11.23 $11.23
$6.68 $66.80
$5.68 $568.00

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