SCS210KGC17

ROHM Semiconductor
755-SCS210KGC17
SCS210KGC17

Mfr.:

Description:
SiC Schottky Diodes RECT 1.2KV 10A RDL SIC SKY

Datasheet:
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In Stock: 752

Stock:
752 Can Dispatch Immediately
Factory Lead Time:
21 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
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Ext. Price:
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Pricing (USD)

Qty. Unit Price
Ext. Price
$9.40 $9.40
$5.19 $51.90
$4.78 $478.00
$4.42 $4,420.00

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220ACG-2
Single
10 A
1.2 kV
1.6 V
42 A
200 uA
+ 175 C
Tube
Brand: ROHM Semiconductor
Pd - Power Dissipation: 150 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 1000
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 1.2 kV
Part # Aliases: SCS210KG
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Attributes selected: 0

Datasheet

Specification Sheets

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USHTS:
8541100080
ECCN:
EAR99

TO-220ACG SiC Schottky Barrier Diodes

ROHM Semiconductor TO-220ACG Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) feature a reverse voltage range of 650V to 1200V and a continuous reverse current range of 1.2µA to 20.0µA. SiC technology enables these devices to maintain a low capacitive charge (QC), reducing switching loss while enabling high-speed switching operation. In addition, unlike Si-based fast-recovery diodes, where the reverse recovery time increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance.

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

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