SCS215AGC17

ROHM Semiconductor
755-SCS215AGC17
SCS215AGC17

Mfr.:

Description:
SiC Schottky Diodes SiC Schottky Barrier Diode, 650V, 15A, 2nd Gen

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about ROHM Semiconductor SCS215AGC17

In Stock: 6,355

Stock:
6,355 Can Dispatch Immediately
Factory Lead Time:
21 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 6355 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$7.99 $7.99
$5.47 $54.70
$3.99 $399.00
$3.59 $1,795.00

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220ACG-2
Single
15 A
650 V
1.55 V
52 A
300 uA
+ 175 C
Tube
Brand: ROHM Semiconductor
Pd - Power Dissipation: 110 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 1000
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 650 V
Part # Aliases: SCS215AG
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

Specification Sheets

This functionality requires JavaScript to be enabled.

Compliance Codes
CNHTS:
8541100000
USHTS:
8541100080
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

TO-220ACG SiC Schottky Barrier Diodes

ROHM Semiconductor TO-220ACG Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) feature a reverse voltage range of 650V to 1200V and a continuous reverse current range of 1.2µA to 20.0µA. SiC technology enables these devices to maintain a low capacitive charge (QC), reducing switching loss while enabling high-speed switching operation. In addition, unlike Si-based fast-recovery diodes, where the reverse recovery time increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance.

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.