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In Stock

RoHS

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SCT4026DEC11

Name: ROHM Semiconductor SCT4026DEC11
Brand: ROHM Semiconductor
SKU: 755-SCT4026DEC11
Price: 19.82 USD
Availability: InStock

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Mouser No:

755-SCT4026DEC11

Mfr. No:

SCT4026DEC11

Mfr.:

ROHM Semiconductor

Description:

SiC MOSFETs TO247 750V 56A N-CH SIC

Datasheet:

SCT4026DEC11 Datasheet

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In Stock: 635

Stock:: 635 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 635 will be subject to minimum order requirements.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$19.82	$19.82
	$12.40	$124.00
	$12.36	$1,236.00
	$12.34	$5,553.00
	$12.33	$11,097.00
10,350	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247N-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	56 A
Rds On - Drain-Source Resistance:	26 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	94 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	176 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	16 nC
Forward Transconductance - Min:	16 S
Packaging:	Tube
Product:	MOSFET's
Product Type:	SiC MOSFETS
Rise Time:	39 nC
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	44 ns
Typical Turn-On Delay Time:	10 ns
Part # Aliases:	SCT4026DE

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Datasheet

SCT4026DEC11 Datasheet

Specification Sheets

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [R_DS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (I_D) and source current (I_S) (T_C=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.