SGT140R70ILB

STMicroelectronics
511-SGT140R70ILB
SGT140R70ILB

Mfr.:

Description:
GaN FETs 700 V, 106 mOhm typ., 17 A, e-mode PowerGaN transistor
Complete Your Design

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about STMicroelectronics SGT140R70ILB

Availability

Stock:
Non-Stocked
Factory Lead Time:
52 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 3000   Multiples: 3000
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (USD)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 3000)
$1.67 $5,010.00
$1.63 $9,780.00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: GaN FETs
SMD/SMT
PowerFLAT-8
700 V
17 A
140 mOhms
- 6 V, + 7 V
2.5 V
3.5 nC
- 55 C
+ 150 C
113 W
Enhancement
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: Not Available
Fall Time: 4 ns
Packaging: Reel
Product: FET
Product Type: GaN FETs
Rise Time: 5 ns
Series: SGT
Factory Pack Quantity: 3000
Subcategory: Transistors
Technology: GaN
Type: PowerGaN Transistor
Typical Turn-Off Delay Time: 3 ns
Typical Turn-On Delay Time: 4 ns
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

PCN

This functionality requires JavaScript to be enabled.

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

SGT G-HEMT™ E-Mode PowerGaN Transistors

STMicroelectronics SGT G-HEMT™ E-Mode PowerGaN Transistors are high‑performance, enhancement‑mode (normally‑off) GaN devices designed to deliver exceptionally fast switching, low conduction losses, and high power density across demanding power‑conversion applications. These transistors leverage Gallium Nitride’s wide‑bandgap advantages to achieve extremely low capacitances, minimal gate charge, and zero reverse‑recovery charge, enabling superior efficiency compared to traditional silicon power switches.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.