It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

SH8KE6TB1

Name: ROHM Semiconductor SH8KE6TB1
Brand: ROHM Semiconductor
SKU: 755-SH8KE6TB1
Price: 2.4 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

755-SH8KE6TB1

Mfr. No:

SH8KE6TB1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs SOP8 100V 4.5A N-CH MOSFET

Datasheet:

SH8KE6TB1 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about ROHM Semiconductor SH8KE6TB1

In Stock: 3,071

Stock:: 3,071 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$2.40	$2.40
	$1.54	$15.40
	$1.07	$107.00
	$0.886	$443.00
	$0.78	$780.00
Full Reel (Order in multiples of 2500)
	$0.768	$1,920.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOP-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	4.5 A
Rds On - Drain-Source Resistance:	58 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	6.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	ROHM Semiconductor
Configuration:	Dual
Fall Time:	7 ns
Forward Transconductance - Min:	3.8 S
Product Type:	MOSFETs
Rise Time:	8.5 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	7.5 ns
Part # Aliases:	SH8KE6

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SH8KE6TB1 Datasheet

Specification Sheets

This functionality requires JavaScript to be enabled.

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

SH8K Dual Nch+Nch Power MOSFETs

ROHM Semiconductor SH8K Dual Nch+Nch Power MOSFETs feature two 40V or 60V MOSFETs in a small, surface-mount SOP8 package with eight terminals. The SH8K series offers low on-resistance and maximum R_DS(on) of 8.4mΩ, 12.4mΩ, or 19.4mΩ. Other features are 2W power dissipation and ±8.5A, ±10.5, or ±13.5A drain current ID. These RoHS-compliant MOSFETs are halogen free and use Pb-free plating. ROHM Semiconductor SH8K Dual Nch+Nch Power MOSFETs are ideally suited for switching applications.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.