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SISS72DN-T1-GE3

Name: Vishay SISS72DN-T1-GE3
Brand: Vishay Semiconductors
SKU: 78-SISS72DN-T1-GE3
Price: 2.31 USD
Availability: InStock

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Mouser No:

78-SISS72DN-T1-GE3

Mfr. No:

SISS72DN-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs 150V Vds 20V Vgs PowerPAK 1212-8S

Datasheet:

SISS72DN-T1-GE3 Datasheet

ECAD Model:

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In Stock: 6,118

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Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$2.31	$2.31
	$1.49	$14.90
	$1.01	$101.00
	$0.808	$404.00
	$0.758	$758.00
Full Reel (Order in multiples of 3000)
	$0.666	$1,998.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK1212-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	25.5 A
Rds On - Drain-Source Resistance:	42 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	22 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	65.8 W
Channel Mode:	Enhancement
Tradename:	TrenchFET, ThunderFET, PowerPAK
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	9 ns
Forward Transconductance - Min:	16 S
Product Type:	MOSFETs
Rise Time:	6 ns
Series:	SISS
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	18 ns
Unit Weight:	1 g

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Datasheet

SISS72DN-T1-GE3 Datasheet

Models

PCN

Product Change Notification (PDF)

Technical Resources

REACH Certificate (PDF)

CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SISS7xDN TrenchFET MOSFETs

Vishay SISS7xDN-T1-GE3 TrenchFET MOSFETs use TrenchFET^®with ThunderFET technology that optimizes the balance of R_DS, Q_G,Q_SW,and Q_OSS. These MOSFETs are 100% Rg and Unclamped Inductive Switching (UIS) tested. The SISS7xDN TrenchFET MOSFETs find applications in primary side switching, synchronous rectification, DC/DC converters, motor drive control, and load switches. These MOSFETs are available in PowerPAK 1212-8S package.