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SSM3J338R,LF

Name: Toshiba SSM3J338R,LF
Brand: Toshiba
SKU: 757-SSM3J338RLF
Price: 0.53 USD
Availability: InStock

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See Product Specifications

Mouser No:

757-SSM3J338RLF

Mfr. No:

SSM3J338R,LF

Mfr.:

Toshiba

Description:

MOSFETs Small-signal MOSFET Vdss= -12V, ID= -6A

Datasheet:

SSM3J338R,LF Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba SSM3J338R,LF

In Stock: 83,094

Stock:: 83,094

Can Dispatch Immediately

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On Order:: 213,000

Expected 2026/07/03
Factory Lead Time:: 19

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.53	$0.53
	$0.326	$3.26
	$0.207	$20.70
	$0.156	$78.00
	$0.14	$140.00
Full Reel (Order in multiples of 3000)
	$0.117	$351.00
	$0.106	$636.00
	$0.091	$819.00
	$0.086	$2,064.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-23F
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	12 V
Id - Continuous Drain Current:	6 A
Rds On - Drain-Source Resistance:	17.6 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	300 mV
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1 W
Channel Mode:	Enhancement
Tradename:	U-MOSVII
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Product Type:	MOSFETs
Series:	SSM3J338
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	383 ns
Typical Turn-On Delay Time:	65 ns
Unit Weight:	11 mg

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Datasheet

SSM3J338R,LF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Discrete Solid State Drive (SSD) Solutions

Toshiba Discrete Solid State Drive (SSD) Solutions feature a broad product lineup that meets current requirements with TVS, Shottkey Barrier Diodes (SBD), LDOs, Load Switch ICs, and the powerful eFuse IC. These SSDs can parse through data quicker than a traditional Hard Disk Drive (HDD). As SSD technology improves, it will require power circuitry that meets increasingly rigorous power demands and protection that keeps essential data safe from failures. Toshiba offers a comprehensive lineup of load switches and MOSFETs for controlling power inputs, protection ICs, and diodes designed to handle abnormal input power conditions and overvoltage surges during hotplug.

U-MOSVII MOSFETs

Toshiba U-MOSVII MOSFETs are single and dual P-channel MOSFETs with low voltage gate drive and low drain-source on-resistance. These Toshiba devices have a drain-source voltage range of -12V to -20V and a continuous drain current range from -1A to +14A. The U-MOSVII MOSFETs are offered in a wide range of package types for design flexibility.