TJ20S04M3L,LXHQ
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See Product Specifications
See Product Specifications
757-TJ20S04M3L,LXHQ
TJ20S04M3L,LXHQ
Mfr.:
Description:
MOSFETs 41W 1MHz Automotive; AEC-Q101
MOSFETs 41W 1MHz Automotive; AEC-Q101
Datasheet:
In Stock: 8,705
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Stock:
-
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Pricing (USD)
| Qty. | Unit Price |
Ext. Price
|
|---|---|---|
| $1.45 | $1.45 | |
| $0.918 | $9.18 | |
| $0.611 | $61.10 | |
| $0.477 | $238.50 | |
| $0.435 | $435.00 | |
| Full Reel (Order in multiples of 2000) | ||
| $0.386 | $772.00 | |
Datasheet
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2