TJ80S04M3L,LXHQ
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See Product Specifications
See Product Specifications
757-TJ80S04M3L,LXHQ
TJ80S04M3L,LXHQ
Mfr.:
Description:
MOSFETs 100W 1MHz Automotive; AEC-Q101
MOSFETs 100W 1MHz Automotive; AEC-Q101
Datasheet:
In Stock: 4,116
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Stock:
-
4,116 Can Dispatch ImmediatelyAn unexpected error occurred. Please try again later.
Pricing (USD)
| Qty. | Unit Price |
Ext. Price
|
|---|---|---|
| $1.97 | $1.97 | |
| $1.40 | $14.00 | |
| $0.943 | $94.30 | |
| $0.759 | $379.50 | |
| $0.706 | $706.00 | |
| Full Reel (Order in multiples of 2000) | ||
| $0.611 | $1,222.00 | |
Datasheet
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2