VS-4C12ET07THM3

Vishay Semiconductors
78-VS-4C12ET07THM3
VS-4C12ET07THM3

Mfr.:

Description:
SiC Schottky Diodes SicG4TO-2202L

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
1,000
Expected 2026/08/14
Factory Lead Time:
12
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$4.47 $4.47
$2.99 $29.90
$2.30 $230.00
$2.05 $1,025.00
$1.73 $1,730.00
$1.67 $3,340.00
$1.65 $8,250.00

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220AC-2
Single
12 A
650 V
1.3 V
72 A
84 uA
-55 C
+ 175 C
VS-4C12ET07THM3
Brand: Vishay Semiconductors
Pd - Power Dissipation: 91 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 1000
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 650 V
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Power Silicon Carbide Schottky Diodes

Vishay Semiconductors Power Silicon Carbide (SiC) Schottky Diodes are advanced, high‑performance rectifiers designed to deliver exceptional efficiency, ruggedness, and reliability in demanding power‑electronics applications. Built on wide-band-gap SiC technology, these Vishay diodes offer virtually zero reverse‑recovery charge, extremely fast switching capability, and temperature‑invariant performance, making the devices ideal for next‑generation high‑frequency power conversion systems.