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In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

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VS-4C15ET12S2LHM3

Name: Vishay VS-4C15ET12S2LHM3
Brand: Vishay Semiconductors
SKU: 78-VS-4C15ET12S2LHM3
Price: 7.39 USD
Availability: OutOfStock

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Mouser No:

78-VS-4C15ET12S2LHM3

Mfr. No:

VS-4C15ET12S2LHM3

Mfr.:

Vishay Semiconductors

Description:

SiC Schottky Diodes SiCG4D2PAK2L

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

VS-4C15ET12S2LHM3 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Vishay Semiconductors VS-4C15ET12S2LHM3

Availability

Stock:: 0

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On Order:: 800

Expected 2026/08/14
Factory Lead Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$7.39	$7.39
	$5.91	$59.10
	$4.78	$478.00
	$4.26	$2,130.00
	$3.76	$3,008.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-263AB-2
Configuration:	Single
If - Forward Current:	15 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.36 V
Ifsm - Forward Surge Current:	75 A
Ir - Reverse Current:	200 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	VS-4C15ET12S2LHM3
Brand:	Vishay Semiconductors
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	HK
Pd - Power Dissipation:	167 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	800
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	1.2 kV

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Datasheet

VS-4C15ET12S2LHM3 Datasheet (PDF)

Power Silicon Carbide Schottky Diodes

Vishay Semiconductors Power Silicon Carbide (SiC) Schottky Diodes are advanced, high‑performance rectifiers designed to deliver exceptional efficiency, ruggedness, and reliability in demanding power‑electronics applications. Built on wide-band-gap SiC technology, these Vishay diodes offer virtually zero reverse‑recovery charge, extremely fast switching capability, and temperature‑invariant performance, making the devices ideal for next‑generation high‑frequency power conversion systems.