NTMFS5H419NLT1G

onsemi
863-NTMFS5H419NLT1G
NTMFS5H419NLT1G

Mfr.:

Description:
MOSFETs Single N-Channel Power MOSFET 40V, 150A, 2.1mohm

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 1,890

Stock:
1,890 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1500)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$2.11 $2.11
$1.27 $12.70
$0.94 $94.00
$0.764 $382.00
$0.737 $737.00
Full Reel (Order in multiples of 1500)
$0.68 $1,020.00
$0.638 $1,914.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
SO-8FL-4
N-Channel
1 Channel
40 V
155 A
2.1 mOhms
- 20 V, 20 V
1.2 V
45 nC
- 55 C
+ 150 C
89 W
Enhancement
Reel
Cut Tape
MouseReel
Brand: onsemi
Configuration: Single
Fall Time: 15 ns
Forward Transconductance - Min: 80 S
Product Type: MOSFETs
Rise Time: 56 ns
Series: NTMFS5H419NL
Factory Pack Quantity: 1500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 62 ns
Typical Turn-On Delay Time: 24 ns
Unit Weight: 175 mg
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

NTMFS5H419NL 40V 150A N-Channel Power MOSFET

onsemi NTMFS5H419NL 40V 150A N-channel Power MOSFET is a Single Channel MOSFET offering low ON resistance, low gate charge, and low capacitance. These features minimize conduction loss and provide superior switching performance. The NTMFS5H419NL Power MOSFET is offered in a compact 5mm x 6mm DFN-5 package, ideal for space constrained applications.

Trench8 MOSFETs

onsemi Trench8 MOSFETs feature low maximum ON-resistance (RDS(ON), ultra-low gate charge (Qg), and low (Qg) x RDS(ON), a key figure of merit (FOM) for MOSFETs used in power conversion applications. Featuring optimized switching performance based on T6 technology, the Trench8 MOSFETs offer a 35% to 40% reduction in Qg and Qoss from the Trench6 series. The onsemi Trench8 MOSFETs are available in a wide range of package types for design flexibility. AEC-Q101 Qualified and PPAP capable options are available for automotive applications. Many of these devices are offered in flank-wettable packages enabling automated optical inspection (AOI).