It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

SIR680LDP-T1-RE3

Name: Vishay SIR680LDP-T1-RE3
Brand: Vishay Semiconductors
SKU: 78-SIR680LDP-T1-RE3
Price: 3.29 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

78-SIR680LDP-T1-RE3

Mfr. No:

SIR680LDP-T1-RE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs N-Ch 80-V (D-S)

Datasheet:

SIR680LDP-T1-RE3 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Vishay Semiconductors SIR680LDP-T1-RE3

In Stock: 69,599

Stock:: 69,599 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$3.29	$3.29
	$2.14	$21.40
	$1.49	$149.00
	$1.27	$635.00
Full Reel (Order in multiples of 3000)
	$1.21	$3,630.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	130 A
Rds On - Drain-Source Resistance:	2.8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	135 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	104 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	24 ns
Product Type:	MOSFETs
Rise Time:	132 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	94 ns
Typical Turn-On Delay Time:	32 ns
Unit Weight:	750 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SIR680LDP-T1-RE3 Datasheet

Models

SIR680LDP-T1-RE3 Symbol & Footprint by SnapMagic

Technical Resources

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

TrenchFET® Gen IV MOSFETs

Vishay / Siliconix TrenchFET^® Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK^® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low R_DS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK^® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high-power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switches.

SIR680LDP-T1-RE3 N-Channel MOSFET

Vishay SIR680LDP-T1-RE3 N-Channel MOSFET is an 80V (D-S) TrenchFET^® Gen IV power MOSFET. This N-Channel MOSFET features very low R_DS - Q_g Figure-Of-Merit (FOM) and is tuned for the lowest R_DS - Q_oss FOM. Typical applications include synchronous rectification, primary side switches, DC/DC converters, solar micro-inverters, motor drive switches, batteries, load switches, and industrial.