MJD2873 NPN 50V 2A High Power Bipolar Transistors

Nexperia MJD2873 NPN 50V 2A High Power Bipolar Transistors come in a power DPAK, TO-252 (SOT428C) surface-mounted device (SMD) plastic package. These devices have a high thermal power dissipation capability and have high energy efficiency due to less heat generation. The Nexperia MJD2873 has a low collector-emitter saturation voltage and has fast switching speeds. Typical applications for these devices are power management, load switch, linear mode voltage regulator, constant current drive backlighting, motor drives, and relay replacement. The MJD2873-Q bipolar transistor is AEC-Q101 qualified.

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Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Nexperia Bipolar Transistors - BJT SOT428 50V 2A NPN HI PWR BJT
Datasheet
3,555In Stock
MouseReel Available
Min.: 1
Mult.: 1
Max.: 2,500
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) NPN Single 2 A 50 V 6 V 300 mV 15 W 65 MHz - 55 C + 150 C Reel, Cut Tape, MouseReel
Nexperia Bipolar Transistors - BJT SOT428 50V 2A NPN HI PWR BJT
Datasheet
Non-Stocked Lead-Time 53 Weeks
Min.: 2,500
Mult.: 2,500
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) NPN Single 3 A 50 V 6 V 300 mV 1.6 W 65 MHz - 55 C + 150 C AEC-Q101 Reel