QPD1029L

Qorvo
772-QPD1029L
QPD1029L

Mfr.:

Description:
GaN FETs 1.2-1.4GHz,1500W,65V,GaN RF I/P-Mtchd Tr

Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
20 Weeks Estimated factory production time.
Minimum: 18   Multiples: 18
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (USD)

Qty. Unit Price
Ext. Price
$2,103.80 $37,868.40

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: GaN FETs
RoHS:  
Brand: Qorvo
Maximum Operating Frequency: 1.4 GHz
Minimum Operating Frequency: 1.2 GHz
Moisture Sensitive: Yes
Output Power: 1.5 kW
Packaging: Waffle
Product Type: GaN FETs
Series: QPD1029L
Factory Pack Quantity: 18
Subcategory: Transistors
Technology: GaN
Transistor Type: HEMT
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Attributes selected: 0

Datasheet

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USHTS:
8541497080
ECCN:
EAR99

QPD1029L GaN RF IMFET Transistor

Qorvo QPD1029L GaN RF Internally Matched FET (IMFET) Transistor is a 1500W (P3dB) discrete GaN on SiC High Electron Mobility Transistor (HEMT). This RF IMFET operates between a 1.2GHz to 1.4GHz frequency range. The QPD1029L transistor provides ease of external board match and saves board space. This Qorvo transistor is a RoHS-compliant device. The QPD1029L IMFET transistor device is used in an industry-standard air cavity package and is ideally suited for radar.

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