|
|
MOSFETs HIGH POWER_NEW
- IPT60R040S7XTMA1
- Infineon Technologies
-
1:
$9.36
-
985In Stock
|
Mouser Part No
726-IPT60R040S7XTMA1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
985In Stock
|
|
|
$9.36
|
|
|
$6.40
|
|
|
$4.73
|
|
|
$4.42
|
|
|
$4.42
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
40 mOhms
|
- 20 V, 20 V
|
4.5 V
|
83 nC
|
- 55 C
|
+ 150 C
|
245 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPT60R065S7XTMA1
- Infineon Technologies
-
1:
$6.75
-
1,079In Stock
|
Mouser Part No
726-IPT60R065S7XTMA1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
1,079In Stock
|
|
|
$6.75
|
|
|
$4.41
|
|
|
$3.26
|
|
|
$2.90
|
|
|
$2.56
|
|
|
$2.56
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
8 A
|
65 mOhms
|
- 12 V, 12 V
|
3.5 V
|
51 nC
|
- 55 C
|
+ 150 C
|
167 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPT60R022S7XTMA1
- Infineon Technologies
-
1:
$13.39
-
21In Stock
-
14,000On Order
|
Mouser Part No
726-IPT60R022S7XTMA1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
21In Stock
14,000On Order
Stock:
21 Can Dispatch Immediately
On Order:
6,000 Expected 2026/07/23
6,000 Expected 2026/07/30
2,000 Expected 2027/03/18
Factory Lead Time:
52 Weeks
|
|
|
$13.39
|
|
|
$9.54
|
|
|
$7.87
|
|
|
$7.43
|
|
|
$7.05
|
|
|
$7.05
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
23 A
|
22 mOhms
|
- 20 V, 20 V
|
4.5 V
|
150 nC
|
- 55 C
|
+ 150 C
|
390 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPP60R022S7XKSA1
- Infineon Technologies
-
1:
$12.84
-
24In Stock
-
2,000On Order
|
Mouser Part No
726-IPP60R022S7XKSA1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
24In Stock
2,000On Order
Stock:
24 Can Dispatch Immediately
On Order:
1,000 Expected 2026/07/23
1,000 Expected 2027/05/26
Factory Lead Time:
52 Weeks
|
|
|
$12.84
|
|
|
$9.57
|
|
|
$7.97
|
|
|
$7.11
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
23 A
|
22 mOhms
|
- 20 V, 20 V
|
4.5 V
|
150 nC
|
- 55 C
|
+ 150 C
|
390 W
|
Enhancement
|
CoolMOS
|
Tube
|
|