TQP3M9040 & TQP3M9041 Dual Low Noise Amplifiers

Qorvo TQP3M9040 and TQP3M9041 Dual Low Noise Amplifiers (LNA) consist of a single monolithic GaAs (Gallium Arsenide) E-pHEMT (Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor) die and integrate bias circuitry as well as shut-down capability. This design enables the TQP3M9040 and TQP3M9041 LNAs to be useful for both Frequency Division Duplex (FDD) and Time Division Duplex (TDD) applications. Both devices do not require a negative supply for operation and are bias adjustable for both drain current and voltage. These balanced amplifiers are optimized for high performance receivers in wireless infrastructure and can be used for base-station transceivers or tower mounted amplifiers.    

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Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Operating Frequency
Operating Supply Voltage
Operating Supply Current
Gain
NF - Noise Figure
Type
Mounting Style
Package/Case
Technology
P1dB - Compression Point
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Qorvo RF Amplifier 2.3-4.0GHz NF.77dB Gain 18 dB
Datasheet
645In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 2,500

2.3 GHz to 6 GHz 2 V to 5 V 57 mA 18.4 dB 0.8 dB Low Noise Amplifiers SMD/SMT QFN-16 Si 22.5 dBm 38.2 dBm - 40 C + 105 C TQP3M9041 Reel, Cut Tape, MouseReel
Qorvo RF Amplifier 1.5-2.3GHz NF .67dB High Gain 18dB
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 2,500
Mult.: 2,500
: 2,500

1.5 GHz to 2.3 GHz 5 V 57 mA 18 dB 0.18 dB Low Noise Amplifiers SMD/SMT QFN-16 Si 20.8 dBm 39.8 dBm - 40 C + 105 C TQP3M9040 Reel