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RoHS

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SI3129DV-T1-GE3

Name: Vishay SI3129DV-T1-GE3
Brand: Vishay / Siliconix
SKU: 78-SI3129DV-T1-GE3
Price: 1.05 USD
Availability: InStock

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Mouser No:

78-SI3129DV-T1-GE3

Mfr. No:

SI3129DV-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs TSOP6 P-CH 80V 3.8A

Datasheet:

SI3129DV-T1-GE3 Datasheet

ECAD Model:

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In Stock: 161,619

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.05	$1.05
	$0.659	$6.59
	$0.431	$43.10
	$0.333	$166.50
	$0.301	$301.00
Full Reel (Order in multiples of 3000)
	$0.256	$768.00
	$0.237	$1,422.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TSOP-6
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	5.4 A
Rds On - Drain-Source Resistance:	82.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	12 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	4.2 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	12 ns
Product Type:	MOSFETs
Rise Time:	8 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	TrenchFET Power MOSFET
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	15 ns
Unit Weight:	20 mg

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Datasheet

SI3129DV-T1-GE3 Datasheet

Technical Resources

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CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Si3129DV P-Channel 80V (D-S) MOSFET

Vishay / Siliconix Si3129DV P-Channel 80V (D-S) MOSFET is 100% R_g tested in a TSOP-6 single package. The Si3129DV MOSFET offers a ±20V gate-source voltage and an -55°C to 150°C operating junction temperature range. The Vishay / Siliconix Si3129DV P-Channel 80V MOSFET is designed for power management for portable and consumer applications.