ZXMS6005N8 IntelliFET Self-Protected MOSFET

Diodes Inc. ZXMS6005N8 IntelliFET Self-Protected MOSFET is designed as a low-side, N-Channel MOSFET with logic-level input. The design integrates overcurrent, over-temperature, overvoltage (active clamp), and ESD-protected logic level functionality. These features allow the MOSFET to provide immunity from radiated and conducted emissions in harsh environments. Designers can use the ZXMS6005N8 MOSFET as a general-purpose switch driven from 3.3V or 5V microcontrollers. The ZXMS6005N8 MOSFET offers 60V continuous drain source voltage, 200mΩ on-state resistance, 2.8A nominal load current, and 490mJ clamping energy. With its wide array of protection features, the ZXMS6005N8 IntelliFET is ideal for harsh environments where standard MOSFET may not be rugged enough.