NTMFSC006N12MC

onsemi
863-NTMFSC006N12MC
NTMFSC006N12MC

Mfr.:

Description:
MOSFETs 120V PTNG IN 5X6 DUALCOOL

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 2,411

Stock:
2,411 Can Dispatch Immediately
Factory Lead Time:
33 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$3.26 $3.26
$2.12 $21.20
$1.47 $147.00
$1.26 $630.00
$1.20 $1,200.00
Full Reel (Order in multiples of 3000)
$1.17 $3,510.00

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
DFN-8
N-Channel
2 Channel
120 V
92 A
6.1 mOhms
- 20 V, 20 V
4 V
48 nC
+ 150 C
104 W
Enhancement
PowerTrench
Reel
Cut Tape
Brand: onsemi
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 5.7 ns
Product Type: MOSFETs
Rise Time: 5.3 ns
Series: NTMFSC006N12MC
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 25.5 ns
Typical Turn-On Delay Time: 15.2 ns
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

NTMFSC006N Dual Cool N-Channel Power MOSFET

onsemi NTMFSC006N Dual Cool™ N-Channel Power MOSFET offers the power Trench® process in a dual-sided cooled packaging. This power MOSFET features ultra-low RDS(ON), 120V drain-to-source voltage, ±20V gate-to-source voltage, 1459A pulsed drain current, and 150°C maximum operating junction/storage temperature. The NTMFSC006N Dual Cool™ N-channel power MOSFET is 100% UIL tested and RoHS-compliant. Typical applications include AC-DC merchant power supply, primary DC-DC FET, synchronous rectifier, and DC-DC conversion.