MJD148 NPN 45V 4A High Power Bipolar Transistor

Nexperia MJD148 NPN 45V 4A High Power Bipolar Transistor comes in a power DPAK, TO-252 (SOT428C) surface-mounted device (SMD) plastic package. These devices have a high thermal power dissipation capability and have high energy efficiency due to less heat generation. The Nexperia MJD148 has a low collector-emitter saturation voltage and has fast switching speeds. Typical applications for these devices are power management, load switch, linear mode voltage regulator, constant current drive backlighting, motor drives, and relay replacement. The MJD148-Q bipolar transistor is AEC-Q101 qualified.

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Qty. RoHS ECAD Model Technology
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Package/Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
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Maximum Operating Temperature
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Nexperia Bipolar Transistors - BJT SOT428 45V 4A NPN HI PWR BJT
Datasheet
Product Comments
2,014In Stock
MouseReel Available
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Mult.: 1
Max.: 2,014
Reel: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) NPN Single 7 A 45 V 6 V 500 mV 1.6 W 3 MHz - 55 C + 150 C AEC-Q101 Reel, Cut Tape, MouseReel
Nexperia Bipolar Transistors - BJT SOT428 45V 4A NPN HI PWR BJT
Datasheet
Product Comments
2,116In Stock
MouseReel Available
Min.: 1
Mult.: 1
Max.: 2,116
Reel: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) NPN Single 4 A 45 V 6 V 500 mV 15 W 3 MHz - 55 C + 150 C Reel, Cut Tape, MouseReel