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NTTFS012N10MDTAG

Name: onsemi NTTFS012N10MDTAG
Brand: onsemi
SKU: 863-NTTFS012N10MDTAG
Price: 2.16 USD
Availability: InStock

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Mouser No:

863-NTTFS012N10MDTAG

Mfr. No:

NTTFS012N10MDTAG

Mfr.:

onsemi

Description:

MOSFETs PTNG 100V LOW Q 12MOHM N-FET U8FL

Datasheet:

NTTFS012N10MDTAG Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTTFS012N10MDTAG

In Stock: 9,702

Stock:: 9,702 Can Dispatch Immediately

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Factory Lead Time:: 21 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$2.16	$2.16
	$1.43	$14.30
	$0.968	$96.80
	$0.771	$385.50
	$0.733	$733.00
Full Reel (Order in multiples of 1500)
	$0.664	$996.00
	$0.63	$1,890.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Package/Case:	WDFN-8
Tradename:	PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Product Type:	MOSFETs
Series:	NTTFS012N10MD
Factory Pack Quantity:	1500
Subcategory:	Transistors

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Datasheet

NTTFS012N10MDTAG Datasheet

Material Composition Disclosure

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

PowerTrench Technology

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.

NTTFS012N10MD N-Channel MOSFET

onsemi NTTFS012N10MD N-Channel MOSFET is designed using an advanced PowerTrench^® process that incorporates Shielded Gate technology. This process has been optimized to minimize the on-state resistance R_DS(on) to minimize conduction losses and yet maintain superior switching performance. The NTTFS012N10MD MOSFET features low Q_G and capacitance to minimize driver losses, low Q_RR, soft recovery body diode, and low Q_OSS to improve light-load efficiency. Typical applications include primary switches in isolated DC-DC converters, AC-DC adapters, synchronous rectification in DC-DC and AC-DC, BLDC motors, load switches, and solar inverters.