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In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

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EPC2304

Name: EPC EPC2304
Brand: EPC
SKU: 65-EPC2304
Price: 8.4 USD
Availability: InStock

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See Product Specifications

Mouser No:

65-EPC2304

Mfr. No:

EPC2304

Mfr.:

EPC

Description:

GaN FETs EPC eGaN FET, 200 V, 5 milliohm at 5 V, 3 mm x 5 mm FCQFN

Lifecycle:

New At Mouser

Datasheet:

EPC2304 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about EPC EPC2304

In Stock: 14,265

Stock:: 14,265 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$8.40	$8.40
	$5.77	$57.70
	$4.52	$452.00
	$4.26	$4,260.00
Full Reel (Order in multiples of 3000)
	$3.84	$11,520.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	EPC
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	FCQFN-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	133 A
Rds On - Drain-Source Resistance:	5 mOhms
Vgs - Gate-Source Voltage:	6 V, - 4 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	21 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Channel Mode:	Enhancement
Tradename:	eGaN FET
Brand:	EPC
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Product:	Power Transistor
Product Type:	GaN FETs
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	1 N-Channel
Unit Weight:	31.500 mg

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Datasheet

EPC2304 Datasheet (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

EPC2304 Enhancement-Mode GaN Power Transistor

Efficient Power Conversion (EPC) EPC2304 Enhancement-Mode Gallium Nitride (GaN) Power Transistor is designed to handle tasks where ultra-high switching frequency and low on-time are advantageous, as well as those where on-state losses dominate. This eGaN^® FET offers exceptionally high electron mobility and low temperature coefficient, allowing low drain-source on resistance R_DS(on) of 3.5mΩ typical and 5mΩ maximum. The EPC2304's lateral device structure and majority carrier diode provide exceptionally low total gate charge (Q_G) and zero reverse recovery (Q_RR) losses. This 200V_DS power transistor from EPC comes in an ultra-small 3mm x 5mm QFN package for higher power density.