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In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

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RM2312-T

Name: Rectron RM2312-T
Brand: Rectron
SKU: 583-RM2312-T
Price: 0.57 USD
Availability: InStock

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See Product Specifications

Mouser No:

583-RM2312-T

Mfr. No:

RM2312-T

Mfr.:

Rectron

Description:

MOSFETs

Datasheet:

RM2312-T Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Rectron RM2312-T

In Stock: 2,404

Stock:: 2,404 Can Dispatch Immediately

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Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.578	$0.58
	$0.427	$4.27
	$0.242	$24.20
	$0.163	$81.50
	$0.124	$124.00
Full Reel (Order in multiples of 3000)
	$0.109	$327.00
	$0.094	$564.00
	$0.087	$783.00
	$0.078	$1,872.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Rectron
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT23-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	4.5 A
Rds On - Drain-Source Resistance:	33 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	500 mV
Qg - Gate Charge:	10 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.25 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Rectron
Configuration:	Single
Fall Time:	28 ns
Forward Transconductance - Min:	10 S
Product Type:	MOSFETs
Rise Time:	18 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	60 ns
Typical Turn-On Delay Time:	20 ns

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Datasheet

RM2312-T Datasheet (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

RM2312 N-Channel Enhancement Mode Power MOSFET

Rectron RM2312 N-Channel Enhancement Mode Power MOSFET uses advanced trench technology to provide excellent R_DS(ON). The MOSFET features a low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as battery protection or in other switching applications.