CoolSiC™ 1700V SiC Trench MOSFETs

Infineon CoolSiC™ 1700V SiC Trench MOSFETs feature a revolutionary Silicon Carbide material optimized for fly-back topologies. The SiC Trench MOSFETs offer a 12V/0V gate-source voltage compatible with most fly-back controllers.

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Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Infineon Technologies SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
Datasheet
1,121In Stock
4,000Expected 2026/05/21
MouseReel Available
Min.: 1
Mult.: 1
Reel: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.7 kV 5.2 A 1 Ohms - 10 V, + 20 V 4.5 V 5 nC - 55 C + 175 C 68 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
Datasheet
1,827In Stock
1,250Expected 2026/03/19
MouseReel Available
Min.: 1
Mult.: 1
Reel: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.7 kV 9.8 A 450 mOhms - 10 V, + 20 V 4.5 V 11 nC - 55 C + 175 C 107 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
Datasheet
1,974Expected 2026/05/14
MouseReel Available
Min.: 1
Mult.: 1
Reel: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.7 kV 7.4 A 650 mOhms - 10 V, + 20 V 4.5 V 8 nC - 55 C + 175 C 88 W Enhancement CoolSiC