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SCT4018KRC15

Name: ROHM Semiconductor SCT4018KRC15
Brand: ROHM Semiconductor
SKU: 755-SCT4018KRC15
Price: 34.02 USD
Availability: InStock

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Mouser No:

755-SCT4018KRC15

Mfr. No:

SCT4018KRC15

Mfr.:

ROHM Semiconductor

Description:

SiC MOSFETs TO247 1.2KV 81A N-CH SIC

Datasheet:

SCT4018KRC15 Datasheet

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Learn more about ROHM Semiconductor SCT4018KRC15

In Stock: 226

Stock:: 226 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$34.02	$34.02
	$26.38	$263.80

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	81 A
Rds On - Drain-Source Resistance:	23.4 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	170 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	312 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	11 ns
Forward Transconductance - Min:	22 S
Packaging:	Tube
Product:	MOSFET's
Product Type:	SiC MOSFETS
Rise Time:	21 ns
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	13 ns
Part # Aliases:	SCT4018KR

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Datasheet

SCT4018KRC15 Datasheet

Specification Sheets

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Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

SCT4018KR N-Channel SiC Power MOSFET

ROHM Semiconductor SCT4018KR N-Channel Silicon Carbide (SiC) Power MOSFET is a robust device optimized for high-efficiency power conversion in demanding applications. With a drain-source voltage rating of 1200V and a continuous drain current of 81A (at +25°C), the ROHM SCT4018KR delivers excellent performance in high-voltage environments. The device features a low typical on-resistance of 18mΩ and supports fast switching speeds, which significantly reduce switching losses and improve overall system efficiency. Housed in a TO-247-4L package, the SCT4018KR is well-suited for use in industrial power supplies, solar inverters, and motor drives. Leveraging the advantages of SiC technology, the SCT4018KR MOSFET offers superior thermal conductivity, high-temperature operation, and enhanced reliability, making it ideal for compact, high-performance power systems.

AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.