LMG3410R070 600V 70mΩ GaN Power Stage

Texas Instruments LMG3410R070 600V 70mΩ GaN Power Stage with integrated driver and protection offers advantages over silicon MOSFETs. These include ultra-low input and output capacitance. Features include zero reverse recovery, reducing switching losses by as much as 80%, and low switch node ringing to decrease EMI.

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Texas Instruments Gate Drivers 600-V 70-m? GaN with integrated driver a A 595-LMG3411R070RWHR
Datasheet
236In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 250

MOSFET Gate Drivers Half-Bridge SMD/SMT QFN-32 1 Driver 1 Output 12 A 9.5 V 18 V Non-Inverting 2.9 ns 26 ns - 40 C + 125 C LMG3411R070 Reel, Cut Tape, MouseReel
Texas Instruments Gate Drivers 600-V 70-m? GaN with integrated driver a A 595-LMG3411R070RWHT
Datasheet
Non-Stocked Lead-Time 12 Weeks
Min.: 2,000
Mult.: 2,000
Reel: 2,000

MOSFET Gate Drivers High-Side, Low-Side SMD/SMT QFN-32 1 Driver 1 Output 9.5 V 18 V 15 ns 4.2 ns - 40 C + 125 C LMG3411R070 Reel