DMT2004UFDF-7

Diodes Incorporated
621-DMT2004UFDF-7
DMT2004UFDF-7

Mfr.:

Description:
MOSFETs MOSFET BVDSS: 8V-24V

Datasheet:
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In Stock: 3,631

Stock:
3,631 Can Dispatch Immediately
Factory Lead Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$0.90 $0.90
$0.563 $5.63
$0.381 $38.10
$0.293 $146.50
$0.265 $265.00
Full Reel (Order in multiples of 3000)
$0.228 $684.00
$0.211 $1,266.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Diodes Incorporated
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
DFN-2020-6
N-Channel
1 Channel
24 V
14.1 A
4.8 mOhms
- 12 V, 12 V
550 mV
53.7 nC
- 55 C
+ 150 C
12.5 W
Enhancement
Reel
Cut Tape
MouseReel
Brand: Diodes Incorporated
Configuration: Single
Fall Time: 38.6 ns
Product Type: MOSFETs
Rise Time: 9.6 ns
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 30.8 ns
Typical Turn-On Delay Time: 3.9 ns
Unit Weight: 6.750 mg
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

DMT2004UF N-Channel Enhancement Mode MOSFETs

Diodes Incorporated DMT2004UF MOSFET is a 24V N-Channel Enhancement-Mode MOSFET designed with a 0.6mm profile and 4mm2 footprint. Qualified to AEC-Q101 Standards for High Reliability, the DMT2004UF MOSFET minimizes on-state resistance while maintaining excellent switching performance. The DMT2004UF MOSFET offers a 4.8-12.5mΩ on-state resistance, 0.55-1.45V gate threshold voltage, 11.2-14.1A continuous drain current, and 12.5W power dissipation. Switching performance includes a 38.6ns turn-off fall time, 9.6ns turn-on rise time, typical 30.8ns turn-off delay time, typical 3.9ns turn-on delay time, and 11.2ns recovery time. The 24V DMT2004UF N-Channel Enhancement-Mode MOSFET design makes the device ideal for high-efficiency power-management applications.

Gate Drivers

Diodes Incorporated Gate Drivers cover many applications in power systems and motor drives. These gate drivers act as the interface between the microcontroller and IGBT or MOSFET power switches. Diodes Incorporated gate drivers provide optimum drive characteristics while controlling shoot-through.

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

DMTx MOSFETs

Diodes Incorporated DMTx MOSFETs are N-channel enhancement mode MOSFETs with low on-resistance and fast switching. These MOSFETs are also designed to meet the stringent requirements of automotive applications. Diodes Incorporated DMTx MOSFETs are ideal for high-efficiency power management applications.

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