NV6428 Bi-Directional GaNFast™ Power Switches

Navitas Semiconductor NV6428 Bi-Directional GaNFast™ Power Switches are designed to block voltage in both directions. A monolithic, integrated substrate-clamping circuit between each source and the common substrate automatically clamps the source-to-substrate voltage. Navitas’ unique substrate clamp technology delivers optimized switching performance during 4-quadrant operation compared to a floating-substrate switch, which can experience a "back-gating effect".

Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Id - Continuous Drain Current Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature
Navitas Semiconductor GaN FETs GaNFast BDS 650V 52mOhm TOLT 234In Stock
Min.: 1
Mult.: 1
: 450

SMD/SMT TOLT-16 49 A - 10 V, 7 V 2.8 V 3.62 nC - 40 C + 150 C
Navitas Semiconductor GaN FETs GaNFast BDS 650V 52mOhm TOLT Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1
: 1,500

SMD/SMT TOLT-16 49 A - 10 V, 7 V 2.8 V 3.62 nC - 40 C + 150 C