FAD7171MX

onsemi
863-FAD7171MX
FAD7171MX

Mfr.:

Description:
Gate Drivers 600V, 4A, SOIC-8, High-Side Gate Drive IC

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 1,448

Stock:
1,448 Can Dispatch Immediately
Factory Lead Time:
17 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$1.66 $1.66
$1.22 $12.20
$1.11 $27.75
$0.987 $98.70
$0.928 $232.00
$0.893 $446.50
$0.864 $864.00
Full Reel (Order in multiples of 2500)
$0.801 $2,002.50
$0.793 $5,947.50

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: Gate Drivers
RoHS:  
Driver ICs - Various
High-Side
SMD/SMT
SOIC-8
2 Driver
1 Output
10 V
20 V
11 ns
12 ns
- 40 C
+ 125 C
FAD7171MX
Reel
Cut Tape
Brand: onsemi
Input Voltage - Max: 20 V
Input Voltage - Min: 10 V
Maximum Turn-Off Delay Time: 95 ns
Maximum Turn-On Delay Time: 100 ns
Off Time - Max: 95 ns
Operating Supply Current: 105 uA
Output Voltage: 35 mV
Pd - Power Dissipation: 625 mW
Product Type: Gate Drivers
Propagation Delay - Max: 100 ns
Shutdown: No Shutdown
Factory Pack Quantity: 2500
Subcategory: PMIC - Power Management ICs
Technology: Si
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

FAD7171MX High-Side Automotive Gate Driver IC

onsemi FAD7171MX High-Side Automotive Gate Driver IC is a 600V, 4A monolithic high-side gate drive IC, which can drive high-speed MOSFETs and IGBTs that operate up to +600V. The onsemi FAD7171MX features a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. onsemi’s high-voltage process and common-mode noise cancelling techniques provide stable operation of the high-side driver under high-dv/dt noise circumstances. An advanced level-shift circuit offers high-side gate driver operation up to VS=-13V (typical) for VBS=15V. The Under Voltage Lock Out (UVLO) circuit prevents malfunction when VBS is lower than the specified threshold voltage.