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SIRA99DP-T1-GE3

Name: Vishay SIRA99DP-T1-GE3
Brand: Vishay Semiconductors
SKU: 78-SIRA99DP-T1-GE3
Price: 3.44 USD
Availability: InStock

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Mouser No:

78-SIRA99DP-T1-GE3

Mfr. No:

SIRA99DP-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs PPAKSO8 P-CH 30V 47.9A

Datasheet:

SIRA99DP-T1-GE3 Datasheet

ECAD Model:

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In Stock: 2,824

Stock:: 2,824

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On Order:: 6,000

Expected 2026/11/02
Factory Lead Time:: 33

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$3.44	$3.44
	$2.26	$22.60
	$1.57	$157.00
	$1.36	$680.00
	$1.30	$1,300.00
Full Reel (Order in multiples of 3000)
	$1.15	$3,450.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-SO-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	195 A
Rds On - Drain-Source Resistance:	1.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 16 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	172.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	104 W
Channel Mode:	Enhancement
Tradename:	PowerPAK
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	57 ns
Forward Transconductance - Min:	114 S
Product Type:	MOSFETs
Rise Time:	183 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	64 ns
Typical Turn-On Delay Time:	69 ns
Unit Weight:	506.600 mg

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Attributes selected: 0

Filter Document:

CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SiRA99DP 30V P-Channel MOSFET

Vishay Semiconductors SiRA99DP 30V P-Channel MOSFET is a TrenchFET^®Gen IV power MOSFET with low on-resistance, minimizing voltage drop and reducing conduction loss. This SiRA99DP operates in a temperature range of -55°C to +150°C and is available in a single configuration PowerPAK^® SO-8 package. Vishay Semiconductors SiRA99DP 30V P-Channel MOSFET is RoHS compliant and halogen free. Typical applications include load switches, adapter and charger switches, battery protection, and motor drive control.

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.