MRFE6VP61K25HR5

NXP Semiconductors
841-MRFE6VP61K25HR5
MRFE6VP61K25HR5

Mfr.:

Description:
RF MOSFET Transistors VHV6 1.25KW ISM NI1230H

Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
Datasheet:
ECAD Model:
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In Stock: 150

Stock:
150 Can Dispatch Immediately
Factory Lead Time:
53 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 50)
This Product Ships FREE

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$432.04 $432.04
$360.38 $3,603.80
Full Reel (Order in multiples of 50)
$360.38 $18,019.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
NXP
Product Category: RF MOSFET Transistors
RoHS:  
N-Channel
Si
30 A
133 V
1.8 MHz to 600 MHz
24 dB
1.25 kW
+ 150 C
Screw Mount
NI-1230H-4
Reel
Cut Tape
MouseReel
Brand: NXP Semiconductors
Forward Transconductance - Min: 28 S
Number of Channels: 2 Channel
Pd - Power Dissipation: 1.333 kW
Product Type: RF MOSFET Transistors
Series: MRFE6VP61K25H
Factory Pack Quantity: 50
Subcategory: MOSFETs
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: + 10 V
Vgs th - Gate-Source Threshold Voltage: 2.7 V
Part # Aliases: 935314411178
Unit Weight: 13.155 g
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Attributes selected: 0

Datasheet

PCN

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
Malaysia
Country of Diffusion:
United States
The country is subject to change at the time of shipment.

MRFE6VP61K25H RF Power LDMOS Transistor

NXP's MRFE6VP61K25H Wideband RF Power LDMOS Transistor is a high ruggedness device that is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace, and radio/land mobile applications. The MRFE6VP61K25H features an unmatched input and output design allowing wide frequency range utilization, between 1.8MHz and 600MHz. This device can be used in either a single-ended or in a push-pull configuration, is suitable for linear application with appropriate biasing, and has integrated ESD protection with greater negative gate-source voltage range for improved Class C operation.

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