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In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

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CGHV27030S

Name: MACOM CGHV27030S
Brand: MACOM
SKU: 941-CGHV27030S
Price: 81.35 USD
Availability: OutOfStock

Mouser No:

941-CGHV27030S

Mfr. No:

CGHV27030S

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT DC-6.0GHz, 30 Watt

Datasheet:

CGHV27030S Datasheet (PDF)

ECAD Model:

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More Information

Learn more about MACOM CGHV27030S

Availability

Stock:: 0

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On Order:: 500

Expected 2026/08/03
Factory Lead Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$81.35	$81.35
	$64.34	$643.40
	$56.23	$5,623.00
Full Reel (Order in multiples of 250)
	$56.23	$14,057.50

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	DFN-12
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	3.6 A
Vgs th - Gate-Source Threshold Voltage:	- 3 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	12 W
Brand:	MACOM
Configuration:	Single
Gain:	21 dB
Maximum Drain Gate Voltage:	50 V
Maximum Operating Frequency:	2.7 GHz
Minimum Operating Frequency:	0 Hz
Moisture Sensitive:	Yes
Output Power:	30 W
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	GaN FETs
Factory Pack Quantity:	250
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V, 2 V
Unit Weight:	282.130 mg

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Datasheet

CGHV27030S Datasheet (PDF)

PCN

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

CGHV27030S GaN HEMT

MACOM CGHV27030S 30W Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) provides wide bandwidth capabilities and high efficiency with high gain. Operating from DC to 6GHz, the module offers 21dB gain, -36dBc ACLR, and 32% efficiency at 5W PAVE. The transistor is capable of operating with either a 28V or 50V rail. MACOM CGHV27030S GaN HEMT is well-suited for telecommunications applications operating at both 28V and 50V. The device is also ideal for tactical communications applications as well as L-band and S-band radar.