It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

MJE13007G

Name: onsemi MJE13007G
Brand: onsemi
SKU: 863-MJE13007G
Price: 2.24 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-MJE13007G

Mfr. No:

MJE13007G

Mfr.:

onsemi

Description:

Bipolar Transistors - BJT 8A 400V 80W NPN

Datasheet:

MJE13007G Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi MJE13007G

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Bipolar Transistors - BJT
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	NPN
Configuration:	Single
Maximum DC Collector Current:	8 A
Collector- Emitter Voltage VCEO Max:	400 V
Collector- Base Voltage VCBO:	700 V
Emitter- Base Voltage VEBO:	9 V
Collector-Emitter Saturation Voltage:	1 V
Pd - Power Dissipation:	80 W
Gain Bandwidth Product fT:	14 MHz
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 150 C
Series:	MJE13007
Packaging:	Tube
Brand:	onsemi
Continuous Collector Current:	8 A
DC Collector/Base Gain hFE Min:	8
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	50
Subcategory:	Transistors
Unit Weight:	6 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

MJE13007G Datasheet

PCN

SPICE Models

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Malaysia

The country is subject to change at the time of shipment.

FJP13007 High Voltage NPN Power Transistor

onsemi FJP13007 High Voltage NPN Power Transistor features high voltage capability and high switching speed. The FJP13007 is suitable for electronic ballast and switching mode power supplies.

FEATURED PRODUCTS

ONSEMI

NST807 General Purpose PNP Transistors

High performance, reliable transistors with a low saturation voltage and fast switching speeds

Learn More

NST817 General Purpose NPN Transistors

A reliable solution for circuit designs requiring efficient and effective transistor operation.

Learn More

NSVT5551M Bipolar Transistor

AEC-Q101 qualified, NPN general-purpose low V_CE(sat) amplifier.

Learn More

NSS100xCL General Purpose Low VCE(sat) Transistors

High-performance bipolar junction transistors designed for automotive and demanding applications.

Learn More

MJD31C Bipolar Transistors

Designed for general-purpose amplifiers and low-speed switching applications.

Learn More

In Stock: 5,216

Stock:: 5,216 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1 Maximum: 150

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$2.24	$2.24
	$1.33	$13.30
	$0.923	$92.30

MJE13007G

Mfr.: onsemi

Description: Bipolar Transistors - BJT 8A 400V 80W NPN

Specifications

Documents (9)

Datasheet

PCN

SPICE Models

Environmental Documents

Product & Trade Compliance

More Information

FJP13007 High Voltage NPN Power Transistor

Customers Also Purchased

FEATURED PRODUCTS ONSEMI

In Stock: 5,216

Pricing (USD)

QuickView

An unexpected error has occurred.

Mfr.:

onsemi

Description:

Bipolar Transistors - BJT 8A 400V 80W NPN

FEATURED PRODUCTS

ONSEMI