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RY7P250BMTBC

Name: ROHM Semiconductor RY7P250BMTBC
Brand: ROHM Semiconductor
SKU: 755-RY7P250BMTBC
Price: 8.22 USD
Availability: OutOfStock

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Mouser No:

755-RY7P250BMTBC

Mfr. No:

RY7P250BMTBC

Mfr.:

ROHM Semiconductor

Description:

MOSFETs RY7P250BM is a power MOSFET with low-on resistance and high power package, suitable for Hot Swap Controller (HSC).

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

RY7P250BMTBC Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RY7P250BMTBC

Availability

Stock:: 0

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On Order:: 2,500

Expected 2026/06/04

2,500

Expected 2026/06/11
Factory Lead Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$8.22	$8.22
	$5.69	$56.90
	$4.44	$444.00
Full Reel (Order in multiples of 2500)
	$3.77	$9,425.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN8080-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	300 A
Rds On - Drain-Source Resistance:	1.86 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	170 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	340 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	200 ns
Forward Transconductance - Min:	27 S
Product Type:	MOSFETs
Rise Time:	90 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	195 ns
Typical Turn-On Delay Time:	72 ns

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Datasheet

RY7P250BMTBC Datasheet

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

RY7P250BM Power MOSFET

ROHM Semiconductor RY7P250BM Power MOSFET is designed with a low on-resistance of 1.86mΩ (maximum) and comes in a DFN8080 high-power package. This power MOSFET features 100V drain-source voltage (V_DSS), ±300A drain current (I_D), and 340W power dissipation (P_D). The RY7P250BM MOSFET offers a wide Safe Operating Area (SOA) that helps the MOSFET withstand higher voltages and currents without damage, enhancing robustness and reliability. The ROHM RY7P250BM MOSFET is suitable for Hot Swap Controller (HSC) applications.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.