AFE20408RHBT

Texas Instruments
595-AFE20408RHBT
AFE20408RHBT

Mfr.:

Description:
Analog Front End - AFE Eight-channel power- amplifier monitor a

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 126

Stock:
126 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)
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Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$191.07 $191.07
$162.56 $1,625.60
$155.45 $3,886.25
Full Reel (Order in multiples of 250)
$143.58 $35,895.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Analog Front End - AFE
RoHS:  
AFE20408
Power-Amplifier Monitor and Controller
13 bit
8 Channel
I2C, SPI
11 V
- 3 V
- 40 C
+ 125 C
SMD/SMT
VQFN-32
Reel
Cut Tape
MouseReel
Analogue Supply Voltage: 3 V to 5.5 V
Brand: Texas Instruments
Digital Supply Voltage: 1.65 V to 3.6 V
DNL - Differential Nonlinearity: 1 LSB
Gain Error: 0.01 %FSR, 0.1 %
INL - Integral Nonlinearity: 4 LSB
Moisture Sensitive: Yes
Number of Converters: 3 Converter
Product Type: Analog Front End - AFE
Reference Type: Internal
Reference Voltage: 2.5 V
Factory Pack Quantity: 250
Subcategory: Data Converter ICs
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CAHTS:
8542310000
USHTS:
8542310030
ECCN:
EAR99

AFE20408 Power-Amplifier Monitor & Controller

Texas Instruments AFE20408 Power-Amplifier Monitor and Controller is a highly integrated power-amplifier (PA) monitor and control device capable of temperature, current, and voltage supervision. The AFE20408 bias controller is based on eight digital-to-analog converters (DACs) with programmable output ranges. The eight gate bias outputs are switched on and off through dedicated control pins. The gate bias switches are designed for fast response and enable correct power sequencing and protection of depletion-mode transistors, such as GaAs and GaN.