QPA2962 2GHz to 20GHz 10W GaN Amplifier

Qorvo QPA2962 2GHz to 20GHz 10W GaN Amplifier is a wideband power amplifier fabricated on Qorvo's QGaN15 GaN on silicon carbide (SiC) process. The amplifier operates from 2GHz to 20GHz frequency bandwidth and provides 10W of saturated power with 13dB large signal gain with 22% power-added efficiency at 22V drain bias. QPA2962 features RF ports that are matched to 50Ω and include integrated DC blocking capacitors and an RF choke. Qorvo QPA2962 2GHz to 20GHz 10W GaN Amplifier is available in a 5mm x 5mm air cavity laminate package and is ideal for wideband communications systems, electronic warfare, test instrumentation, and radar applications for both military and commercial markets.

Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Operating Frequency Operating Supply Voltage Operating Supply Current Gain Type Mounting Style Technology Minimum Operating Temperature Maximum Operating Temperature Series Packaging
Qorvo RF Amplifier 2-20 GHz 10 W GaN Amp
32In Stock
Min.: 1
Mult.: 1

2 GHz to 20 GHz 22 V 1.68 A 19 dB Power Amplifiers SMD/SMT GaN SiC - 40 C + 85 C QPA2962 Bag
Qorvo QPA2962TR7
Qorvo RF Amplifier 2-20 GHz 10 W GaN Amp
Non-Stocked Lead-Time 20 Weeks
Min.: 250
Mult.: 250
Reel: 250

QPA2962 Reel