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RoHS

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RV4E031RPHZGTCR1

Name: ROHM Semiconductor RV4E031RPHZGTCR1
Brand: ROHM Semiconductor
SKU: 755-RV4E031RPHZGTCR1
Price: 0.3 USD
Availability: OutOfStock

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Mouser No:

755-RV4E031RPHZGTCR1

Mfr. No:

RV4E031RPHZGTCR1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs AECQ

Datasheet:

RV4E031RPHZGTCR1 Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RV4E031RPHZGTCR1

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 17 Weeks Estimated factory production time.

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Minimum: 3000 Multiples: 3000

Unit Price:

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 3000)
	$0.308	$924.00
	$0.302	$1,812.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-1616-6W
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	3.1 A
Rds On - Drain-Source Resistance:	105 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	4.8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.5 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Fall Time:	18 ns
Forward Transconductance - Min:	1.5 S
Product Type:	MOSFETs
Rise Time:	22 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	35 ns
Typical Turn-On Delay Time:	7 ns
Part # Aliases:	RV4E031RPHZG

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Datasheet

RV4E031RPHZGTCR1 Datasheet

Specification Sheets

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

RV4E031RP HZG Small Signal MOSFET

ROHM Semiconductor RV4E031RP HZG Small Signal MOSFET features low on-resistance, a small high power package, and a low voltage drive. This MOSFET is 100% UIS tested and includes a Wettable Flank for Automated Optical-solder Inspection (AOI). The RV4E031RP HZG signal MOSFET operates at -55°C to 150°C junction temperature range and storage temperature range. This MOSFET offers -30V drain-source voltage, ±3.1A continuous drain current, and 1.5W power dissipation. Typical applications include switching circuits, high side load switch, and high-speed line driver.