HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Results: 720
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
IXYS MOSFETs 600V 16A Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-263D2 Non-Stocked
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 18 A 230 mOhms - 30 V, 30 V 2.5 V 35 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/18A TO-263 Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 18 A 200 mOhms - 30 V, 30 V 3 V 29 nC - 55 C + 150 C 290 W Enhancement HiPerFET Tube
IXYS MOSFETs Polar3 HiPerFET Power MOSFET Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 500 V 20 A 300 mOhms HiPerFET Tube
IXYS MOSFETs TO263 600V 22A N-CH POLAR Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50
Si HiPerFET Tube
IXYS MOSFETs TrenchT2 HiperFETs Power MOSFET Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT TO-263AA-3 N-Channel 1 Channel 75 V 230 A 4.2 mOhms - 20 V, 20 V 2 V 178 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-263D2 Non-Stocked
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 24 A 175 mOhms - 30 V, 30 V 2.5 V 47 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube
IXYS MOSFETs N-Channel: Power MOSFET w/Fast Diode Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 26 A 240 mOhms HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-263D2 Non-Stocked
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 30 A 155 mOhms - 30 V, 30 V 2.5 V 56 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFETs TO263 250V 44A N-CH X3CLASS Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT TO-263-3 N-Channel 1 Channel 250 V 44 A 40 mOhms - 20 V, 20 V 2.5 V 33 nC - 55 C + 175 C 240 W Enhancement HiPerFET Tube
IXYS MOSFETs Polar3 HiPerFETs MOSFET w/Fast Diode Non-Stocked
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 600 V 4 A 2.2 Ohms HiPerFET Tube
IXYS MOSFETs TO263 850V 3.5A N-CH XCLASS Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) HiPerFET Tube
IXYS MOSFETs TO263 200V 50A N-CH X3CLASS Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 50 A 30 mOhms - 20 V, 20 V 2.5 V 33 nC - 55 C + 150 C 240 W Enhancement HiPerFET Tube
IXYS MOSFETs Polar3 HiPerFETs MOSFET w/Fast Diode Non-Stocked
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 500 V 5 A 1.65 Ohms HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-263D2 Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 72 A 20 mOhms - 20 V, 20 V 2.5 V 55 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFETs TO263 150V 76A N-CH TRENCH Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT TO-263-3 N-Channel 1 Channel 150 V 76 A 22 mOhms - 20 V, 20 V 2.5 V 97 nC - 55 C + 175 C 350 W Enhancement HiPerFET Tube
IXYS MOSFETs 600V 7A Non-Stocked
Min.: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 600 V 7 A 1.15 Ohms HiPerFET Tube
IXYS MOSFETs 7 Amps 800V 1.44 Rds Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 7 A 1.4 Ohms - 30 V, 30 V 3 V 32 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/8A TO-263 Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 8 A 450 mOhms - 30 V, 30 V 3 V 11 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube
IXYS MOSFETs 850V/8A U-Junc X-Cla ss Power MOSFET Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 850 V 8 A 850 mOhms - 30 V, 30 V 3 V 17 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube
IXYS MOSFETs TO263 200V 90A N-CH X3CLASS Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 90 A 12.8 mOhms - 20 V, 20 V 2.5 V 78 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 500V/100A Lead-Time 37 Weeks
Min.: 1
Mult.: 1

Si Through Hole PLUS-264-3 N-Channel 1 Channel 500 V 100 A 49 mOhms - 30 V, 30 V 3.5 V 255 nC - 55 C + 150 C 1.56 kW Enhancement HiPerFET Tube
IXYS MOSFETs Polar Power MOSFET HiPerFET Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 300 V 170 A 18 mOhms - 20 V, 20 V 4.5 V 258 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs 210 Amps 200V 0.0105 Rds Non-Stocked Lead-Time 44 Weeks
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 200 V 210 A 10.5 mOhms - 20 V, 20 V - 55 C + 175 C 1.5 kW HiPerFET Tube
IXYS MOSFETs POLAR PWR MOSFET 100V, 300A Non-Stocked Lead-Time 39 Weeks
Min.: 300
Mult.: 25

Si Through Hole PLUS-264-3 N-Channel 1 Channel 100 V 300 A 5.5 mOhms - 20 V, 20 V 5 V 279 nC - 55 C + 175 C 1.5 kW Enhancement HiPerFET Tube