HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Results: 720
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging

IXYS MOSFETs 180 Amps 150V 0.011 Ohm Rds Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 180 A 11 mOhms - 20 V, 20 V - 55 C + 175 C 830 W Enhancement HiPerFET Tube

IXYS MOSFETs 200 Amps 100V 0.0075 Rds Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 200 A 7.5 mOhms - 20 V, 20 V 2.5 V 235 nC - 55 C + 175 C 830 W Enhancement HiPerFET Tube

IXYS MOSFETs GigaMOS Trench T2 HiperFET Pwr MOSFET Non-Stocked Lead-Time 25 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 170 V 220 A 6.3 mOhms - 20 V, 20 V 2.5 V 500 nC - 55 C + 175 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 150 V 240 A 5.2 mOhms - 20 V, 20 V 2.5 V 460 nC - 55 C + 175 C 1.25 mW Enhancement HiPerFET Tube

IXYS MOSFETs Polar3 HiPerFET Power MOSFET Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 250 A 6.5 mOhms - 20 V, 20 V 3 V 205 nC - 55 C + 175 C 1.25 mW Enhancement HiPerFET Tube

IXYS MOSFETs 26 Amps 1000V Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 20 A 390 mOhms - 30 V, 30 V - 55 C + 150 C 780 W Enhancement HiPerFET Tube

IXYS MOSFETs 27 Amps 800V 0.32 Rds Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 27 A 320 mOhms - 20 V, 20 V 4.5 V 170 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET Non-Stocked Lead-Time 28 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 170 V 320 A 5.2 mOhms - 20 V, 20 V 2.5 V 640 nC - 55 C + 175 C 1.67 mW Enhancement HiPerFET Tube

IXYS MOSFETs 32 Amps 1000V 0.32 Rds Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 32 A 320 mOhms - 30 V, 30 V 6.5 V 225 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/32A Non-Stocked Lead-Time 57 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 32 A 320 mOhms - 30 V, 30 V 3.5 V 195 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube

IXYS MOSFETs 32 Amps 800V 0.27 Rds Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 32 A 270 mOhms - 30 V, 30 V - 55 C + 150 C 830 W Enhancement HiPerFET Tube

IXYS MOSFETs Polar HiPerFETs MOSFET w/Fast Diode Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 32 A 300 mOhms - 30 V, 30 V 6.5 V 215 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube

IXYS MOSFETs 600V 44A Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 44 A 130 mOhms - 20 V, 20 V 4.5 V 330 nC - 55 C + 150 C 560 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 800V/44A Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 44 A 190 mOhms - 30 V, 30 V 185 nC 1.25 kW HiPerFET Tube

IXYS MOSFETs 600V 48A Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 48 A 135 mOhms - 30 V, 30 V 3 V 150 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 600V/48A Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 48 A 140 mOhms - 30 V, 30 V 140 nC 1 kW HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 500V/64A Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 64 A 85 mOhms - 30 V, 30 V 145 nC 1 kW HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 600V/64A Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 64 A 95 mOhms - 30 V, 30 V 190 nC 1.25 kW HiPerFET Tube

IXYS MOSFETs 850V Ultra Junction X-Class Pwr MOSFET Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 850 V 66 A 65 mOhms - 30 V, 30 V 3.5 V 230 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-247AD Non-Stocked
Min.: 1
Mult.: 1
Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 600 V 90 A 38 mOhms - 30 V, 30 V 2.5 V 210 nC - 55 C + 150 C 1.1 kW Enhancement HiPerFET Tube

IXYS MOSFETs 500V 98A 0.05Ohm PolarP3 Power MOSFET Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 98 A 50 mOhms - 30 V, 30 V 5 V 197 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFETs Polar3 HiPerFETs MOSFET w/Fast Diode Non-Stocked
Min.: 1
Mult.: 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 600 V 4 A 2.2 Ohms HiPerFET Tube
IXYS MOSFETs TO252 850V 4A N-CH XCLASS Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT DPAK-3 (TO-252-3) HiPerFET Tube
IXYS MOSFETs Polar3 HiPerFETs MOSFET w/Fast Diode Non-Stocked
Min.: 1
Mult.: 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 500 V 5 A 1.65 Ohms HiPerFET Tube
IXYS MOSFETs 100 Amps 40V Non-Stocked Lead-Time 28 Weeks
Min.: 1
Mult.: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 40 V 100 A 7 mOhms - 20 V, 20 V 2 V 25.5 nC - 55 C + 175 C 150 W Enhancement HiPerFET Tube