HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Results: 720
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
IXYS MOSFETs IXTA102N15T TRL Non-Stocked Lead-Time 23 Weeks
Min.: 800
Mult.: 800
Reel: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 150 V 102 A 18 mOhms - 20 V, 20 V 2.5 V 87 nC - 55 C + 175 C 455 W Enhancement HiPerFET Reel
IXYS MOSFETs 110 Amps 55V 6.7 Rds Non-Stocked
Min.: 1
Mult.: 1
Si SMD/SMT TO-263-7 N-Channel 1 Channel 55 V 110 A 7 mOhms - 55 C + 175 C 230 W Enhancement HiPerFET Tube
IXYS MOSFETs 120 Amps 40V Non-Stocked Lead-Time 28 Weeks
Min.: 1
Mult.: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 40 V 120 A 6.1 mOhms - 20 V, 20 V 2 V - 55 C + 175 C 200 W Enhancement HiPerFET Tube
IXYS MOSFETs 120 Amps 75V Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 75 V 120 A 7.7 mOhms - 20 V, 20 V 2 V 78 nC - 55 C + 175 C 250 W Enhancement HiPerFET Tube
IXYS MOSFETs 130 Amps 65V Non-Stocked
Min.: 1
Mult.: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 65 V 130 A 6.6 mOhms - 20 V, 20 V 2 V 79 nC - 55 C + 175 C 250 W Enhancement HiPerFET Tube
IXYS MOSFETs 130 Amps 100V 8.5 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 130 A 8.5 mOhms - 55 C + 175 C 360 W Enhancement HiPerFET Tube
IXYS MOSFETs 130 Amps 100V 8.5 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 130 A 8.5 mOhms - 30 V, 30 V - 55 C + 175 C 360 W Enhancement HiPerFET Tube
IXYS MOSFETs TO263 N-CH 55V 140A Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 55 V 140 A 5.4 mOhms - 20 V, 20 V 2 V 82 nC - 55 C + 175 C 180 W Enhancement HiPerFET Tube
IXYS MOSFETs TO263 120V 140A N-CH TRENCH Non-Stocked Lead-Time 28 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT TO-263-3 N-Channel 1 Channel 120 V 140 A 10 mOhms - 20 V, 20 V 2.5 V 174 nC - 55 C + 175 C 577 W Enhancement HiPerFET Tube
IXYS MOSFETs 160 Amps 100V 6.9 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 160 A 7 mOhms - 55 C + 175 C 430 W Enhancement HiPerFET Tube
IXYS MOSFETs 160 Amps 100V 6.9 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT TO-263-7 N-Channel 1 Channel 100 V 160 A 7 mOhms - 55 C + 175 C 430 W Enhancement HiPerFET Tube
IXYS MOSFETs 170 Amps 75V Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 75 V 170 A 5.4 mOhms - 20 V, 20 V 2 V 109 nC - 55 C + 175 C 360 W Enhancement HiPerFET Tube
IXYS MOSFETs 200 Amps 55V 0.0042 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 55 V 200 A 3.3 mOhms - 20 V, 20 V 4 V 109 nC - 55 C + 175 C 360 W Enhancement HiPerFET Tube
IXYS MOSFETs TO263 N-CH 55V 200A Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1
Si SMD/SMT TO-263-7 N-Channel 1 Channel 55 V 200 A 4.2 mOhms - 20 V, 20 V 2 V 109 nC - 55 C + 175 C 360 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/9A Power MOSFET Non-Stocked
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 20 A 210 mOhms - 30 V, 30 V 3 V 35 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube

IXYS MOSFETs TO263 650V 20A N-CH X3CLASS Non-Stocked Lead-Time 41 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 20 A 185 mOhms - 30 V, 30 V 2.5 V 27 nC - 55 C + 150 C 290 W Enhancement HiPerFET Tube
IXYS MOSFETs 220 Amps 40V 0.0035 Rds Non-Stocked Lead-Time 28 Weeks
Min.: 1
Mult.: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 40 V 220 A 2.8 mOhms - 20 V, 20 V 4 V 112 nC - 55 C + 175 C 360 W Enhancement HiPerFET Tube
IXYS MOSFETs 220 Amps 40V 0.0035 Rds Non-Stocked Lead-Time 28 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT TO-263-7 N-Channel 1 Channel 40 V 220 A 2.8 mOhms - 20 V, 20 V 4 V 112 nC - 55 C + 175 C 360 W Enhancement HiPerFET Tube
IXYS MOSFETs Disc MSFT NChTrenchGate-Gen4 TO-263D2 Non-Stocked
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 230 A 2.9 mOhms - 15 V, 15 V 2 V 140 nC - 55 C + 175 C 340 W Enhancement HiPerFET Tube
IXYS MOSFETs TO263 N-CH 75V 230A Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT TO-263-7 N-Channel 1 Channel 75 V 230 A 4.2 mOhms - 20 V, 20 V 2 V 178 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs TO263 650V 24A N-CH X2CLASS Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 12 A 145 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFETs TO263 N-CH 55V 260A Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT TO-263-3 N-Channel 1 Channel 55 V 260 A 3.3 mOhms - 20 V, 20 V 2 V 140 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs 260 Amps 55V Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT TO-263-7 N-Channel 1 Channel 55 V 260 A 3.3 mOhms - 20 V, 20 V 4 V 140 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs 40V/270A TrenchT4 Power MOSFET Non-Stocked
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 270 A 2.2 mOhms - 15 V, 15 V 2 V 182 nC - 55 C + 175 C 375 W Enhancement HiPerFET Tube
IXYS MOSFETs 40V/270A TrenchT4 Power MOSFET Non-Stocked
Min.: 1
Mult.: 1

Si SMD/SMT TO-263-7 N-Channel 1 Channel 40 V 270 A 2.2 mOhms - 15 V, 15 V 2 V 182 nC - 55 C + 175 C 375 W Enhancement HiPerFET Tube