HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Results: 720
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
IXYS MOSFETs 300 Amps 40V 0.025 Rds Non-Stocked Lead-Time 28 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT TO-263-3 N-Channel 1 Channel 40 V 300 A 2.5 mOhms - 20 V, 20 V 2 V 145 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs 32 Amps 200V 78 Rds Non-Stocked
Min.: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 32 A 78 mOhms - 20 V, 20 V 5 V 38 nC - 55 C + 175 C 200 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltraJnctn X2Class TO-263D2 Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 34 A 96 mOhms - 30 V, 30 V 3 V 54 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFETs Disc MSFT NChTrenchGate-Gen4 TO-263D2 Non-Stocked
Min.: 1
Mult.: 1

Si SMD/SMT TO-263-7 N-Channel 1 Channel 36 V 380 A 1 mOhms - 15 V, 15 V 2 V 260 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs 48 Amps 200V 50 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 48 A 50 mOhms - 30 V, 30 V - 55 C + 175 C 250 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltraJnctn X2Class TO-263D2 Non-Stocked Lead-Time 41 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 700 V 2 A 850 mOhms - 30 V, 30 V 2.5 V 11.8 nC - 55 C + 150 C 80 W Enhancement HiPerFET Tube
IXYS MOSFETs 50 Amps 250V 50 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 250 V 50 A 60 mOhms - 30 V, 30 V 5 V 78 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube
IXYS MOSFETs 56 Amps 150V 36 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1
Si SMD/SMT D2PAK-3 (TO-263-3) 150 V 56 A 36 mOhms HiPerFET Tube
IXYS MOSFETs 60 Amps 200V Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 60 A 40 mOhms HiPerFET Tube
IXYS MOSFETs 70 Amps 75V 0.0120 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1
Si SMD/SMT TO-263-3 N-Channel 1 Channel 75 V 70 A 12 mOhms - 20 V, 20 V 2 V 46 nC - 55 C + 175 C 150 W Enhancement HiPerFET Tube
IXYS MOSFETs 76 Amps 250V 39 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 250 V 76 A 42 mOhms - 20 V, 20 V 5 V 92 nC - 55 C + 150 C 460 W Enhancement HiPerFET Tube
IXYS MOSFETs 80 Amps 100V 13.0 Rds Lead-Time 23 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 105 V 80 A 14 mOhms - 20 V, 20 V 5 V 60 nC - 55 C + 175 C 230 W Enhancement HiPerFET Tube
IXYS MOSFETs TrenchT2 MOSFETs Power MOSFETs Non-Stocked Lead-Time 28 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 120 V 80 A 17 mOhms - 20 V, 20 V 2.5 V 80 nC - 55 C + 175 C 325 W Enhancement HiPerFET Tube
IXYS MOSFETs 86 Amps 200V 29 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 86 A 29 mOhms - 30 V, 30 V - 55 C + 175 C 480 W HiPerFET Tube
IXYS MOSFETs 700V/8A Ultra Junct X2-Class MOSFET Non-Stocked Lead-Time 41 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 700 V 8 A 500 mOhms - 30 V, 30 V 3 V 12 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube
IXYS MOSFETs 90 Amps 55V 0.0084 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 55 V 90 A 8.4 mOhms - 20 V, 20 V 2 V 42 nC - 55 C + 175 C 150 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-263D2 Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 90 A 12 mOhms - 20 V, 20 V 2.5 V 78 nC - 55 C + 175 C 390 W Enhancement HiPerFET Tube
IXYS MOSFETs 200 Amps 100V 5.4 Rds Non-Stocked Lead-Time 24 Weeks
Min.: 300
Mult.: 25

Si Through Hole ISOPLUS-i4-PAK-5 N-Channel 1 Channel 100 V 120 A 6.3 mOhms - 55 C + 175 C 200 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChTrenchGate-Gen1 TO-247AD Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 102 A 18 mOhms - 20 V, 20 V 2.5 V 87 nC - 55 C + 175 C 455 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltraJnctn X2Class TO-247AD Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 12 A 300 mOhms - 30 V, 30 V 2.5 V 17.7 nC - 55 C + 150 C 180 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltraJnctn X2Class TO-247AD Non-Stocked Lead-Time 41 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 12 A 300 mOhms - 30 V, 30 V 2.5 V - 55 C + 150 C 180 W Enhancement HiPerFET Tube

IXYS MOSFETs 130 Amps 100V 8.5 Rds Non-Stocked Lead-Time 23 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 130 A 8.5 mOhms - 20 V, 20 V 2.5 V 104 nC - 55 C + 175 C 360 W Enhancement HiPerFET Tube

IXYS MOSFETs 130 Amps 150V 12 Rds Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 130 A 12 mOhms HiPerFET Bulk

IXYS MOSFETs 160Amps 150V Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 160 A 8 mOhms - 30 V, 30 V 2.5 V 160 nC - 55 C + 175 C 830 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltraJnctn X2Class TO-247AD Non-Stocked Lead-Time 41 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 20 A 185 mOhms - 30 V, 30 V 2.5 V 27 nC - 55 C + 150 C 290 W Enhancement HiPerFET Tube